Samsung starts building 3nm smartphone chips in Korea
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We’re slowly moving toward the size limitations of our Universe but before we reach that Planck volume, there’s still some wiggle room. This means smaller, faster, and more efficient chips in our smartphones of tomorrow.
Let’s leave quantum physics behind, and go straight to the news (feel free to discuss Planck constants in the comment section below). After TSMC published its roadmap, shedding light on when we can expect 3nm and 2nm chips, now Samsung has announced the production start of its 3nm semiconductor chips in Hwaseong factory in South Korea.
Samsung is moving to a new architecture, swapping FinFET (fin field-effect transistor) for GAA (Gate All Around). And if you’re worried that more physics is coming your way, just breathe. GAA offers several advantages over FinFET – the main one being higher power efficiency.
“The second generation will bring a hefty 50% increase in power efficiency, 30% better performance, and 35% less area.”
Another new technology involved in Samsung’s 3nm manufacturing node is the nanosheet transistor manufacturing. It replaces the nanowire technology, again boosting efficiency and also performance in this case. Using nanosheets gives the ability to very easily adjust this efficiency and performance parameters by simply altering the size of the nanosheet.
Samsung is quoting some impressive numbers, comparing the new 3nm node with the old 5nm manufacturing process. The new chips should come with 23% improved performance, a 45% reduction in power usage, and an area reduction of 16%, and this is just the first generation of 3nm silicon.
The second generation will bring a hefty 50% increase in power efficiency, 30% better performance, and 35% less area. Here’s a little inspirational quote from Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics:
“Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as foundry industry’s first High-K Metal Gate, FinFET, as well as EUV. We seek to continue this leadership with the world’s first 3nm process with the MBCFETTM. We will continue active innovation in competitive technology development and build processes that help expedite achieving maturity of technology.”
Questions & Answers
Q.Where are Samsung's new 3nm semiconductor chips being manufactured?
Where are Samsung's new 3nm semiconductor chips being manufactured?
Samsung has announced that the production of its 3nm semiconductor chips is starting in the Hwaseong factory, which is located in South Korea.
Q.What new architectural approach is Samsung using for its 3nm manufacturing process?
What new architectural approach is Samsung using for its 3nm manufacturing process?
Samsung is adopting a new architecture for its 3nm manufacturing process. It is swapping out the older FinFET technology in favour of the more advanced GAA (Gate All Around) architecture.
Q.What improvements can be expected from the first generation of Samsung's 3nm chips compared to 5nm technology?
What improvements can be expected from the first generation of Samsung's 3nm chips compared to 5nm technology?
The first generation 3nm chips are expected to offer 23% improved performance and a 45% reduction in power usage. There will also be a 16% reduction in the chip's physical area.
Q.Which specific smartphone processor is likely to be the first to feature the new 3nm technology?
Which specific smartphone processor is likely to be the first to feature the new 3nm technology?
The next generation Exynos 2300, which has the codename Quadra (S5E9935), is most likely to be the first smartphone processor to leave the factory with the new 3nm technology.