Samsung and SK Hynix Upgrade China Memory Plants Past 200 Layers
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Samsung Electronics and SK Hynix are upgrading their manufacturing plants in China to produce NAND flash memory chips with more than 200 layers. The retrofits target swelling demand for artificial intelligence hardware and push back against domestic rival Yangtze Memory Technologies Co, which recently took the top position in China’s memory market.
Yangtze Memory Technologies Co captured 38.5 percent of China’s NAND flash market during the second quarter, rising from 28 percent across all of 2025. That expansion pushed Samsung’s local market share down to 33.5 percent from 36 percent, while SK Hynix dropped to 17 percent from 20 percent.
Samsung runs its primary overseas memory fabrication site in the northwestern city of Xian. The complex accounts for roughly 40 percent of the South Korean group’s global NAND flash output and currently builds chips stacked to approximately 200 layers.
Retooling Xian for 286 Layers
Under an internal project named Monami, Samsung is converting the Xian factory lines to produce 286-layer V9 NAND chips. The plant is scheduled to process 5,000 wafers monthly starting in December this year, stepping up to 40,000 wafers each month by December 2027. Samsung confirmed the plant updates are proceeding in compliance with Washington’s export regulations.
The upgrade is aimed at meeting growing demand from global customers, including those in the US. The company is not expanding production capacity or constructing new manufacturing facilities.
SK Hynix Pushes Dalian Operations
SK Hynix is pursuing a parallel upgrade at its site in Dalian in northeastern China. The facility currently manufactures 192-layer NAND chips, and the company plans to transition lines toward 240 layers or higher.
“The facility currently manufactures 192-layer NAND chips, and the company plans to transition lines toward 240 layers or higher.”
The South Korean group took over the Dalian factory in 2021 through its acquisition of Intel’s NAND flash business. The subsidiary, operating under the Solidigm brand, relies on Dalian as its sole NAND manufacturing site while preparing for an initial public offering in the United States.
SK Hynix holds clearance to assemble chips up to 240 layers at Dalian. The company may request permission from the United States to run research and development on chips with more than 300 layers there, creating technical groundwork for planned manufacturing on American soil.
Regulatory Pressure and Domestic Competition
For hardware brands and electronics assemblers operating across Asia, the plant refits determine component pricing and local component availability. Samsung and SK Hynix have faced operational hurdles since the United States rolled out export controls on advanced semiconductor equipment in 2022. Both manufacturers must obtain annual American licences to import specialized tools such as etching gear into mainland China.
The US Commerce Department’s Bureau of Industry and Security announced in 2025 that it did not intend to authorize technology upgrades or capacity expansions at foreign-owned semiconductor plants in China. Restricting foreign lines gave YMTC room to run. The Chinese manufacturer relies on 160-layer and 232-layer designs for volume shipments, but it already yields limited batches of 294-layer memory and is preparing architectures exceeding 300 layers.
Fab Limits and the Next Phase
South Korean chipmakers have kept their most advanced production lines at home to safeguard proprietary designs. Outside mainland China, Samsung sells NAND chips stacked up to 286 layers and showed a prototype with more than 400 layers in August, while SK Hynix markets finished memory chips reaching 321 layers.
Operating legacy processes in China risks shutting both suppliers out of high-density solid-state drive contracts for mainland data centres and premium smartphone manufacturers. SK Hynix is concurrently holding discussions with the Trump administration regarding plans to build a new NAND factory in the United States. Samsung’s retrofitted Xian facility is aiming for an initial monthly output of 5,000 wafers in December this year.
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